Thermodynamic spin magnetization of strongly correlated two-dimensional electrons in a silicon inversion layer

5 S ep 2 00 2 The thermodynamic spin magnetization of strongly correlated 2 d electrons in a silicon inversion layer

A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity...

Two-Dimensional Compact Inversion of Magnetic Data in the Presence of Remanent Magnetization

Remnant magnetization causes a change in the direction and intensity of the magnetization vector. If inversion is performed regardless of remnance, in some cases it may have unreliable and misleading results. For inversion with respect to remnant magnetization, several solutions have been proposed so far, one of which is to convert the data of total magnetic field into data that is independent ...

Spin transition in strongly correlated bilayer two-dimensional electron systems.

Using a combination of heat pulse and nuclear magnetic resonance techniques, we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at nu(T) = 1 in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usu...

Exact result on the Mott transition in a two-dimensional model of strongly correlated electrons.

France We study the properties of a quarter-filled system of electrons on a square lattice interacting through a local repulsion U and a nearest-neighbour repulsion V in the limit V = +∞. We identify the ground-state for U large enough and show that domain walls appear below a critical value U c = 4t/π. We argue that this corresponds to a metal-insulator transition due to Mott localization.

Strongly correlated electrons